Class 12 Physics - Chapter 14: Semiconductor Electronics MCQ Questions

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Your Class 12 Physics Study Path

Question 1

Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E_g)C, (E_g)Si and (E_g) Ge. Which of the following statements is true?

A (E_g)C = (E_g)Si = (E_g)Ge

B (E_g)C > (E_g)Si > (E_g)Ge

C (E_g)C < (E_g)Ge > (E_g)Si

D (E_g)Si < (E_g)Ge < (E_g)C

Question 2

In an unbiased p-n junction, holes diffuse from the p-region to n-region because

A All the above.

B hole concentration in p-region is more as compared to n-region.

C they move across the junction by the potential difference.

D free electrons in the n-region attract them.

Question 3

In a p-n junction diode, change in temperature due to heating:

A affects the overall V-I characteristics of p-n junction

B Does not affect resistance of p-n junction

C affects only forward resistance

D affects only reverse resistance

Question 4

To reduce the ripples in a rectifier circuit with capacitor filter which one is false?

A Capacitors with high capacitance should be used.

B Input frequency should be increased.

C Input frequency should be decreased.

D R_L should be increased.

Question 5

A specimen of silicon is to be made p-type semiconductor for this one atom of indium, on an average, is doped in 5 Ã— 10⁷ silicon atoms. If the number density of silicon is 5 Ã— 10²² atoms m^-3, then the number of acceptor atoms per cmÂ³ will be

A 2.5 Ã— 10³⁶

B 1.0 Ã— 10¹⁵

C 1.0 Ã— 10¹³

D 2.5 Ã— 10³⁰

Question 6

A 10.0 A

B 2.5 A

C 3.13 A

D 1.43 A

Question 7

A D₁ and D₂ are both reverse biased and hence no current flows from A to B and vice versa.

B D₁ and D₂ are both forward biased and hence current flows from A to B.

C D₂ is forward biased and D₁ is reverse biased and hence no current flows from B to A and vice versa.

D D₁ is forward biased and D₂ is reverse biased and hence current flows from A to B.

Question 8

A 10^-3 A

B 10^-1 A

C 10^-2A

D 0 A

Question 9

For the depletion region of a diode which one is incorrect?

A Immobile charged ions exist.

B Recombination of holes and electrons has taken place.

C Equal number of holes and electrons exists, making the region neutral.

D There are no mobile charges.

Question 10

Hole is

A an artificially created particle.

B absence of free electrons.

C a vacancy created when an electron leaves a covalent bond.

D an anti-particle of electron.

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Class 12 Physics - Chapter 14: Semiconductor Electronics MCQ Questions

Your Class 12 Physics Study Path

Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E_g)C, (E_g)Si and (E_g) Ge. Which of the following statements is true?

In an unbiased p-n junction, holes diffuse from the p-region to n-region because

In a p-n junction diode, change in temperature due to heating:

To reduce the ripples in a rectifier circuit with capacitor filter which one is false?

A specimen of silicon is to be made p-type semiconductor for this one atom of indium, on an average, is doped in 5 Ã— 10⁷ silicon atoms. If the number density of silicon is 5 Ã— 10²² atoms m^-3, then the number of acceptor atoms per cmÂ³ will be

For the depletion region of a diode which one is incorrect?

Hole is

Practice Complete!

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Class 12 Physics - Chapter 14: Semiconductor Electronics MCQ Questions

Your Class 12 Physics Study Path

Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si and (Eg) Ge. Which of the following statements is true?

In an unbiased p-n junction, holes diffuse from the p-region to n-region because

In a p-n junction diode, change in temperature due to heating:

To reduce the ripples in a rectifier circuit with capacitor filter which one is false?

A specimen of silicon is to be made p-type semiconductor for this one atom of indium, on an average, is doped in 5 Ã— 107 silicon atoms. If the number density of silicon is 5 Ã— 1022 atoms m-3, then the number of acceptor atoms per cmÂ³ will be

For the depletion region of a diode which one is incorrect?

Hole is

Practice Complete!

Related Student Tools

Grade Calculator

Marks Percentage Calculator

Percentage Calculator

Students Also Read

Discover More on SaralStudy

Latest Blogs

Popular Blogs

Quick & Popular Links

Quick Links

Popular Study Links

What Students Are Viewing

Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E_g)C, (E_g)Si and (E_g) Ge. Which of the following statements is true?

A specimen of silicon is to be made p-type semiconductor for this one atom of indium, on an average, is doped in 5 Ã— 10⁷ silicon atoms. If the number density of silicon is 5 Ã— 10²² atoms m^-3, then the number of acceptor atoms per cmÂ³ will be