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# Semiconductor Electronics

At Saralstudy, we are providing you with the solution of Class 12th physics Semiconductor Electronics according to the latest NCERT (CBSE) Book guidelines prepared by expert teachers. Here we are trying to give you a detailed answer to the questions of the entire topic of this chapter so that you can get more marks in your examinations by preparing the answers based on this lesson. We are trying our best to give you detailed answers to all the questions of all the topics of Class 12th physics Semiconductor Electronics so that you can prepare for the exam according to your own pace and your speed.

This fourteenth and second last chapter has eleven topics and makes you aware of the differentiation between extrinsic and intrinsic semiconductors, energy bands and their  I-V characteristics, diodes, and types of diodes and their characteristics and uses of diodes, junction transistor and characteristics of a transistor and application. Here you also get knowledge about the concept of analog and digital signals, logic gates. Solving the question at the end of the chapter will tell you how well you have learned them with NCERT Solutions for Class 12 Physics.

Download pdf of NCERT Solutions for Class physics Chapter 14 Semiconductor Electronics

Download pdf of NCERT Examplar with Solutions for Class physics Chapter 14 Semiconductor Electronics ### Exercise 1

•  Q1 In an n-type silicon, which of the following statement is true:(a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons are minority carriers and pentavalent atoms are the dopants. (c) Holes are minority carriers and pentavalent atoms are the dopants. (d) Holes are majority carriers and trivalent atoms are the dopants. Q2 Which of the statements given in Exercise 14.1 is true for p-type semiconductors. Q3 Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E g ) C , (E g ) Si and (E g ) Ge . Which of the following statements is true? (a) (E g ) Si < (E g ) Ge < (E g ) C (b) (E g ) C < (E g ) Ge > (E g ) Si (c) (E g ) C > (E g ) Si > (E g ) Ge (d) (E g ) C = (E g ) Si = (E g ) Ge Q4 In an unbiased p-n junction, holes diffuse from the p-region to n-region because (a) free electrons in the n-region attract them. (b) they move across the junction by the potential difference. (c) hole concentration in p-region is more as compared to n-region. (d) All the above. Q5 When a forward bias is applied to a p-n junction, it (a) raises the potential barrier. (b) reduces the majority carrier current to zero. (c) lowers the potential barrier. (d) None of the above. Q6 For transistor action, which of the following statements are correct: (a) Base, emitter and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter junction is forward biased and collector junction is reverse biased. (d) Both the emitter junction as well as the collector junction are forward biased. Q7 For a transistor amplifier, the voltage gain (a) remains constant for all frequencies. (b) is high at high and low frequencies and constant in the middle frequency range. (c) is low at high and low frequencies and constant at mid frequencies. (d) None of the above. Q8 In half-wave rectification, what is the output frequency if the input frequency is 50 Hz. What is the output frequency of a full-wave rectifier for the same input frequency. Q9 For a CE-transistor amplifier, the audio signal voltage across the collected resistance of 2 kΩ is 2 V. Suppose the current amplification factor of the transistor is 100, find the input signal voltage and base current, if the base resistance is 1 kΩ. Q10 Two amplifiers are connected one after the other in series (cascaded). The first amplifier has a voltage gain of 10 and the second has a voltage gain of 20. If the input signal is 0.01 volt, calculate the output ac signal. Q11 A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm? Q12 The number of silicon atoms per m 3 is 5 × 10 28 . This is doped simultaneously with 5 × 10 22 atoms per m 3 of Arsenic and 5 × 10 20 per m 3 atoms of Indium. Calculate the number of electrons and holes. Given that n i = 1.5 × 10 16 m −3 . Is the material n-type or p-type?

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